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Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization
Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.
Versions
Version | Released | DOI Handle | Published |
---|---|---|---|
1.2.3 | 21 Mar 2014 | doi:10.4231/D35T3G059 | yes |
1.2.2 | 04 Mar 2014 | doi:10.4231/D37W67591 | no |
1.2.1 | 27 Feb 2014 | doi:10.4231/D3HD7NS74 | no |