Semiconductor Device Physics
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Undergraduate Material
nanoHUB-U: Primer on Semiconductor Fundamentals
Purdue University
Taught by Mark Lundstrom
This course provides the essential foundations required to understand the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.
The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. However, any learner seeking an understanding of semiconductors from an electrical engineering perspective will benefit.
A Primer on Semiconductor Device Simulation
Purdue University (2006)
Taught by Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what’s “under the hood.” This talk is a tutorial introduction designed for someone using semiconductor device simulation for the first time.
Electronic Devices Syllabus
By Greg Lush
This syllabus includes a list of possible topics for an Electronic Devices (EE 3329) course that is taught at the University of Texas at El Paso. Instructors may select which topics they wish to cover during a semester.
Topics include: quantum mechanics, quantum theory, semiconductors, carrier models, carrier action, pn junctions, BJT, MOS, MOSFETs
Solid State Electronic Devices
By Nahil Sobh and Mohamed Mohamed
This tool complements the Solid State Electronic Devices Class at the University of Illinois at Urbana-Champaign. It includes 7 simulations: Effect of doping on semiconductors, Fermi Dirac and Maxwell-Boltzmann Distributions, PN Junction Long-base depletion approximation, NP Junction Long-base depletion approximation, PN Junction short-base depletion approximation, NP Junction short-base depletion approximation, PN Junction Exact Solution.
Drift-Diffusion Lab Learning Materials
By Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck, Alejandra J. Magana
These simulations will help users to better understand carrier drift and diffusion in semiconductors.
Resources include: nanoHUB ABACUS tool, recommended reading, demos, examples, exercises, homework and their solutions.
MOSFET Design Calculations Step 1 Step 2 Step 3
By Stella Quinones and Jose Valdez
These three downloadable homework assignments are created to introduce senior level undergraduate Electrical and Computer Engineering student to the design of MOSFETs.
Topics include: MOSFET design, calculations, doping, simulations using nanoHUB MOSFET tool.
MOSFET Design Simulation I
By Stella Quinones, Jose Valdez
Additional homework assignments based on MOSFET design simulations using nanoHUB’s MOSFET tool.
PN Junctions: Simulation and Calculation of Electrostatic Variables
By Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level undergraduate Electrical and Computer Engineering (ECE) students enrolled in the first Electronic Devices course in the ECE curriculum.
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
By Stella Quinones
The flatband voltage is calculated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the gate voltage of a MOS-Capacitor to the interpretation of the energy band diagram of a MOS-Capacitor. The example includes the simulation of a MOS-Capacitor with a p-type substrate and an n+poly silicon gate.