Circuits, Circuit Simulation and Compact Models
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Compact Models
Introduction to Compact Models and Circuit Simulation
The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed to ease the process of developing simulation-ready compact models for novel nanodevices, is briefly described.
Compact Models Available for Download, and in Development
NEEDS is charged to advance device science and to connect it with applications. A central focus is the development of physics-based compact models for novel nanodevices. A suite of compact models that encompass a wide variety of nanodevice physics is being developed. These models provide examples of how compact models can be grounded in fundamental physics and detailed simulations and validated by experiments. NEEDS models provide the community with a library of high-quality models; they serve as case studies and examples, and they drive the development of the NEEDS tools for developing simulation ready compact models.
NEEDS models are licensed with a version of the Compact Model Council (CMC) standard license and follow the CMC recommendations for versioning. Typical NEEDS model releases include: a Verilog-A model for downloading, a MATLAB version when available, a short manual, representative experimental data, references, supporting educational resources, and a parameter extractor (when available).
Compact Models
For a complete list of compact models, visit the NEEDS group
Universal TFET model
Jan 23, 2015 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H
A universal TFET compact model implemented in verilog-A
mCell Model
Jan 19, 2015 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
R3
Nov 21, 2014 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G
Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
FET pH Sensor Model
Nov 03, 2014 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
Spin Switch Model
Oct 23, 2014 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D
We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
MVS Nanotransistor Model (Silicon)
Oct 23, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3H12V82S
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
Oct 23, 2014 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model
Oct 23, 2014 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
TAG Solar Cell Model (p-i-n thin film)
Oct 23, 2014 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
Stanford 2D Semiconductor (S2DS) Transistor Model
Oct 22, 2014 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3QJ78004
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Released Resonant Body Transistor (RBT) Model
Oct 22, 2014 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
MIT Virtual Source GaNFET-RF ( MVSG-RF) Model
Oct 22, 2014 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
III-V Tunnel FET Model
Oct 22, 2014 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D36H4CR3J
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
Ambipolar Virtual Source Compact Model for Graphene FETs
Oct 22, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273
This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).